? semiconductor components industries, llc, 2006 october, 2006 ? rev. 9 1 publication order number: 1smb5.0at3/d 1smb5.0at3 series 600 watt peak power zener transient voltage suppressors unidirectional* the smb series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smb series is supplied in on semiconductor?s exclusive, cost-effective, highly reliable surmetic package and is ideally suite d for use in communication systems, automotive, numerical controls, pr ocess controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. features ? working peak reverse voltage range ? 5.0 v to 170 v ? standard zener breakdown voltage range ? 6.7 v to 199 v ? peak power ? 600 w @ 1.0 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5.0 a above 10 v ? ul 497b for isolated loop circuit protection ? response time is typically < 1.0 ns ? pb?free packages are available mechanical characteristics case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified l?bend providing more contact area to bond pads polarity: cathode indicated by polarity band mounting position: any plastic surface mount zener overvoltage transient suppressors 5.0 v ? 170 v, 600 w peak power device package shipping ? ordering information 1smbxxxat3 smb 2500/tape & reel smb case 403a plastic cathode anode http://onsemi.com 1smbxxxat3g smb (pb?free) 2500/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. see specific marking information in the device marking column of the electrical characteristics table on page 3 o f this data sheet. device marking information a = assembly location y = year ww = work week xx = device code (refer to page 3) = pb?free package marking diagram ayww xx (note: microdot may be in either location)
uni?directional tvs i pp i f v i i r i t v rwm v c v br v f 1smb5.0at3 series http://onsemi.com 2 maximum ratings rating symbol value unit peak power dissipation (note 1) @ t l = 25 c, pulse width = 1 ms p pk 600 w dc power dissipation @ t l = 75 c measured zero lead length (note 2) derate above 75 c thermal resistance from junction?to?lead p d r jl 3.0 40 25 w mw/ c c/w dc power dissipation (note 3) @ t a = 25 c derate above 25 c thermal resistance from junction?to?ambient p d r ja 0.55 4.4 226 w mw/ c c/w forward surge current (note 4) @ t a = 25 c i fsm 100 a operating and storage temperature range t j , t stg ?65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. 10 x 1000 s, non?repetitive. 2. 1 in square copper pad, fr?4 board. 3. fr?4 board, using on semiconductor minimum recommended footprint, as shown in 403a case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 5) = 30 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f 5. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, non?repetitive duty cycle.
1smb5.0at3 series http://onsemi.com 3 electrical characteristics (devices listed in bold, italic are on semiconductor preferred devices.) device* device marking v rwm (note 6) i r @ v rwm breakdown voltage v c @ i pp (note 8) c typ (note 9) v br (note 7) volts @ i t v c i pp volts a min nom max ma volts amps pf 1smb5.0at3, g 1smb6.0at3, g 1smb6.5at3, g 1smb7.0at3, g ke kg kk km 5.0 6.0 6.5 7.0 800 800 500 500 6.40 6.67 7.22 7.78 6.7 7.02 7.6 8.19 7.0 7.37 7.98 8.6 10 10 10 10 9.2 10.3 11.2 12.0 65.2 58.3 53.6 50.0 2700 2300 2140 2005 1smb7.5at3, g 1smb8.0at3, g 1smb8.5at3, g 1smb9.0at3, g kp kr kt kv 7.5 8.0 8.5 9.0 100 50 10 5.0 8.33 8.89 9.44 10.0 8.77 9.36 9.92 10.55 9.21 9.83 10.4 11.1 1.0 1.0 1.0 1.0 12.9 13.6 14.4 15.4 46.5 44.1 41.7 39.0 1890 1780 1690 1605 1smb10at3, g 1smb11at3, g 1smb12at3, g 1smb13at3, g kx kz le lg 10 11 12 13 5.0 5.0 5.0 5.0 11.1 12.2 13.3 14.4 11.7 12.85 14 15.15 12.3 13.5 14.7 15.9 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 35.3 33.0 30.2 27.9 1460 1345 1245 1160 1smb14at3, g 1smb15at3, g 1smb16at3, g 1smb17at3, g lk lm lp lr 14 15 16 17 5.0 5.0 5.0 5.0 15.6 16.7 17.8 18.9 16.4 17.6 18.75 19.9 17.2 18.5 19.7 20.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 25.8 24.0 23.1 21.7 1085 1020 965 915 1smb18at3, g 1smb20at3, g 1smb22at3, g 1smb24at3, g lt lv lx lz 18 20 22 24 5.0 5.0 5.0 5.0 20.0 22.2 24.4 26.7 21.05 23.35 25.65 28.1 22.1 24.5 26.9 29.5 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 20.5 18.5 16.9 15.4 870 790 730 675 1smb26at3, g 1smb28at3, g 1smb30at3, g 1smb33at3, g me mg mk mm 26 28 30 33 5.0 5.0 5.0 5.0 28.9 31.1 33.3 36.7 30.4 32.75 35.05 38.65 31.9 34.4 36.8 40.6 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 14.2 13.2 12.4 11.3 630 590 555 510 1smb36at3, g 1smb40at3, g 1smb43at3, g 1smb45at3, g mp mr mt mv 36 40 43 45 5.0 5.0 5.0 5.0 40.0 44.4 47.8 50.0 42.1 46.75 50.3 52.65 44.2 49.1 52.8 55.3 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.7 10.3 9.3 8.6 8.3 470 430 400 385 1smb48at3, g 1smb51at3, g 1smb54at3, g 1smb58at3, g mx mz ne ng 48 51 54 58 5.0 5.0 5.0 5.0 53.3 56.7 60.0 64.4 56.1 59.7 63.15 67.8 58.9 62.7 66.3 71.2 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 7.7 7.3 6.9 6.4 365 345 330 310 1smb60at3, g 1smb64at3, g 1smb70at3, g 1smb75at3, g nk nm np nr 60 64 70 75 5.0 5.0 5.0 5.0 66.7 71.1 77.8 83.3 70.2 74.85 81.9 87.7 73.7 78.6 86 92.1 1.0 1.0 1.0 1.0 96.8 103 113 121 6.2 5.8 5.3 4.9 300 280 260 245 1smb85at3, g 1smb90at3, g 1smb100at3, g nv nx nz 85 90 100 55.0 5.0 5.0 94.4 100 111 99.2 105.5 117 104 111 123 1.0 1.0 1.0 137 146 162 4.4 4.1 3.7 220 210 190 1smb110at3, g 1smb120at3, g 1smb130at3, g 1smb150at3, g pe pg pk pm 110 120 130 150 5.0 5.0 5.0 5.0 122 133 144 167 128.5 140 151.5 176 135 147 159 185 1.0 1.0 1.0 1.0 177 193 209 243 3.4 3.1 2.9 2.5 175 160 150 135 1smb160at3, g 1smb170at3, g pp pr 160 170 5.0 5.0 178 189 187.5 199 197 209 1.0 1.0 259 275 2.3 2.2 125 120 6. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 7. v br measured at pulse test current i t at an ambient temperature of 25 c. 8. surge current waveform per figure 2 and derate per figure 4 of the general data ? 600 w at the beginning of this group. 9. bias voltage = 0 v, f = 1 mhz, t j = 25 c ?please see 1smb10cat3 to 1smb78cat3 for bidirectional devices. * the ?g? suffix indicates pb?free package available.
1smb5.0at3 series http://onsemi.com 4 1smb5.0at3g 1smb10at3g 1smb48at3g 1smb170at3g nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 s1 s10 s 100 s 1 ms 10 ms 0.1 figure 1. pulse rating curve 01 2 34 0 50 100 t, time (ms) value (%) half value ? i pp 2 peak value ? i pp t r 10 s figure 2. pulse waveform figure 3. typical protection circuit v in v l z in load figure 4. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . bias voltage (volts) figure 5. typical junction capacitance vs. bias voltage 1 10 100 100 0 10 100 1000 10,000 c, capacitance (pf) p pk , peak power (kw) 1 t j = 25 c f = 1 mhz 5
1smb5.0at3 series http://onsemi.com 5 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 6. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 7. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smb series have a very good response time, typically < 1.0 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 8. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 8 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 s pulse. however, when the derating factor for a given pulse of figure 8 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
1smb5.0at3 series http://onsemi.com 6 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 6. figure 7. figure 8. typical derating factor for duty cycle derating factor 1 ms 10 s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
1smb5.0at3 series http://onsemi.com 7 package dimensions smb case 403a?03 issue f *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 8:1 2.743 0.108 2.159 0.085 2.261 0.089 e b d c l1 l a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim a min nom max min millimeters 1.90 2.13 2.45 0.075 inches a1 0.05 0.10 0.20 0.002 b 1.96 2.03 2.20 0.077 c 0.15 0.23 0.31 0.006 d 3.30 3.56 3.95 0.130 e 4.06 4.32 4.60 0.160 l 0.76 1.02 1.60 0.030 0.084 0.096 0.004 0.008 0.080 0.087 0.009 0.012 0.140 0.156 0.170 0.181 0.040 0.063 nom max 5.21 5.44 5.60 0.205 0.214 0.220 h e 0.51 ref 0.020 ref d l1 h e on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 1smb5.0at3/d surmetic is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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